Designing and Analysis of Lightweight InGaN/GaN PV Cell

Authors

  • Shadia Chowdhury Southeast University, Bangladesh
  • Md. Moidul Islam American International University-Bangladesh
  • Md. Mostafizur Rahman American International University-Bangladesh
  • Mission Kumar Debnath American International University-Bangladesh
  • Samera Hossain American International University-Bangladesh

DOI:

https://doi.org/10.3991/ijes.v8i2.14809

Keywords:

InxGa1-xN, GaN, InGaN/GaN, Electric Field, Electric Potential, Current Density, J-V curve, COMSOL Multiphysics.

Abstract


This paper is an effort to analyze the performance and also increase the efficiency of InGaN/GaN solar cell. InGaN/GaN solar cell contains p and n-type layer of GaN and intrinsic layer of InGaN. The proposed structure of solar cell also contains front TCO, back TCO and back reflector. Performance of the designed solar cell was checked based on electric field, current density and electric potential generated in the designed cell. J-V curve is the most important factor to analyze the performance of the solar cell. Power conversion efficiency and fill factors have been calculated from this graph. According to the analysis of the simulation results efficiency of the designed solar cell was 12.91%. At the end, this thesis is about designing successfully with an efficient InGaN/GaN solar cell for further use in solar applications.

Author Biography

Md. Moidul Islam, American International University-Bangladesh

Department of Electrical & Electronic Engineering

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Published

2020-06-25

How to Cite

Chowdhury, S., Islam, M. M., Rahman, M. M., Debnath, M. K., & Hossain, S. (2020). Designing and Analysis of Lightweight InGaN/GaN PV Cell. International Journal of Recent Contributions from Engineering, Science & IT (iJES), 8(2), pp. 46–57. https://doi.org/10.3991/ijes.v8i2.14809

Issue

Vol. 8 No. 2 (2020)

Section

Papers

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