Design and Analysis of High Frame Rate Capable Active Pixel Sensor by Using CNTFET Devices for Nanoelectronics
This paper presents a high frame rate capable Active Pixel Sensor (APS) using Carbon Nanotube Field Effect Transistor (CNTFET) instead of Complementary Metal Oxide Semiconductor (CMOS). Conventionally, the design of a single APS circuit is based on three transistors (3T) model. In order to achieve higher frame rate, one extra transistor with a column sensor circuit has been introduced in the proposed design to reduce the readout time. This study also concerns about the effect of transistor sizing, bias current, and moreover, the chiral vector of CNTFET. The power consumption and power delay product (PDP) are also investigated for specific sets of reset and row selector signal. Data for these studies were collected with the help of HSPICE software which were further plotted in OriginPro to analyze the optimal operation point of APS circuit. The bias current was also recorded for the readout transistor which is uniquely introduced in the proposed model for achieving better readout time. Hence, the main focus of this paper is to improve the frame rate by reducing the readout time. Results of the proposed CNTFET APS circuit are compared with the conventional CMOS APS circuit. The performance benchmarking shows that CNTFET APS cell significantly reduces readout time, PDP, and thus can achieve much higher frame rate than that of conventional CMOS APS cell.
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